Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer

Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

  Wager, John F ^a   Robertson, John ^b  

^a 1148 Kelley Engineering Center Corvallis   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; ELECTRON BARRIER; ELECTRON TRANSPORT; ENERGY-BAND DIAGRAM; FERMI LEVEL PINNING; INSULATOR-SEMICONDUCTOR INTERFACE; INTERFACIAL LAYER; METAL INSULATOR INTERFACES; METAL INSULATORS; METAL WORK FUNCTION; METAL-INDUCED GAP STATE; METAL-INSULATOR-SEMICONDUCTORS; NARROW BAND GAP; QUANTITATIVE FORMULATIONS; SLOPE PARAMETER; ULTRA-THIN; VOLTAGE DROP; WORK-FUNCTION DIFFERENCE;

CONTACTS (FLUID MECHANICS); DIELECTRIC MATERIALS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; GERMANIUM; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON NITRIDE; WORK FUNCTION;

METALS;

EID: 79959493274     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3581159     Document Type: Article

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