Reduction in specific contact resistivity to n + ge using TiO 2 interfacial layer

IEEE Electron Device Letters

Volumn 33, Issue 11, 2012, Pages 1541-1543

  Jason Lin, J Y ^a   Roy, Arunanshu M ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Contact resistance; Fermi level pinning; germanium; titanium dioxide

Indexed keywords

ELECTRON BARRIER; FERMI LEVEL PINNING; INTERFACIAL LAYER; METAL-INSULATOR-SEMICONDUCTOR CONTACTS; RESISTANCE REDUCTION; SPECIFIC CONTACT RESISTIVITY; TIO;

CONTACT RESISTANCE; GERMANIUM; MIS DEVICES;

TITANIUM DIOXIDE;

EID: 84867896761     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2214758     Document Type: Article

References (15)

1. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, "Fermi level pinning and charge neutrality level in germanium," Appl. Phys. Lett., vol. 89, no. 25, p. 252 110, Dec. 2006.
2. D. Connelly, C. Faulkner, P. A. Clifton, and D. E. Grupp, "Fermi-level depinning for low-barrier Schottky source/drain transistors," Appl. Phys. Lett., vol. 88, no. 1, p. 012105, Jan. 2006.
3. M. Kobayashi, A. Kinoshita, K. Saraswat, H.-S. P. Wong, and Y. Nishi, "Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application," J. Appl. Phys., vol. 105, no. 2, p. 023702, Jan. 2009.
4. T. Nishimura, K. Kita, and A. Toriumi, "A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film," Appl. Phys. Exp., vol. 1, no. 5, p. 051406, May 2008.
5. Y. Zhou, M. Ogawa, X. Han, and K. L. Wang, "Alleviation of Fermilevel pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide," Appl. Phys. Lett., vol. 93, no. 20, p. 202 105, Nov. 2008.
6. A. M. Roy, J.-Y. J. Lin, and K. C. Saraswat, "Specific contact resistivity of tunnel barrier contacts used for Fermi level depinning," IEEE Electron Device Lett., vol. 31, no. 10, pp. 1077-1079, Oct. 2010.
7. J.-Y. J. Lin, A. M. Roy, A. Nainani, Y. Sun, and K. C. Saraswat, "Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height," Appl. Phys. Lett., vol. 98, no. 9, p. 092113, Mar. 2011.
8. D. Schroder, Semiconductor Device and Material Characterization. New York: Wiley-Interscience, 2006.
9. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, "Activation and diffusion studies of ion-implanted p and n dopants in germanium," Appl. Phys. Lett., vol. 83, no. 16, p. 3275, Oct. 2003.
10. G. Thareja, J. Liang, S. Chopra, B. Adams, N. Patil, S.-L. Cheng, A. Nainani, E. Tasyurek, Y. Kim, S. Moffatt, R. Brennan, J. McVittie, T. Kamins, K. Saraswat, and Y. Nishi, "High performance germanium N-MOSFET with antimony dopant activation beyond 1 × 1020 cm?3," in IEDM Tech. Dig., Dec. 2010, p. 245.
11. K. Martens, A. Firrincieli, R. Rooyackers, B. Vincent, R. Loo, S. Locorotondo, E. Rosseel, T. Vandeweyer, G. Hellings, B. De Jaeger, M. Meuris, P. Favia, H. Bender, B. Douhard, J. Delmotte,W. Vandervorst, E. Simeon, G. Jurczak, D. Wouters, and J. A. Kittl, "Record low contact resistivity to n-type Ge for CMOS and memory applications," in IEDM Tech. Dig., Dec. 2010, p. 428.
12. J. Kim, S. W. Bedell, S. L. Maurer, R. Loesing, and D. K. Sadana, "Activation of implanted n-type dopants in Ge over the active concentration of 1 × 1020 cm?3 using coimplantation of Sb and P," Electrochem. Solid State Lett., vol. 13, no. 1, pp. H12-H15, Jan. 2010.
13. J. Oh, I. Ok, C.-Y. Kang, M. Jamil, S.-H. Lee, W.-Y. Loh, J. Huang, B. Sassman, L. Smith, S. Parthasarathy, B. E. Coss, W.-H. Choi, H.-D. Lee, M. Cho, S. K. Banerjee, P. Majhi, P. D. Kirsch, H.-H. Tseng, and R. Jammy, "Mechanisms for low on-state current of Ge (SiGe) nMOSFETs: A comparative study on gate stack, resistance, orientationdependent effective masses," in Proc. VLSI Technol. Symp., Jun. 2009, pp. 238-239.
14. G. Thareja, S.-L. Cheng, T. Kamins, K. Saraswat, and Y. Nishi, "Electrical characteristics of germanium n +p junctions obtained using rapid thermal annealing of coimplanted P and Sb," IEEE Electron Device Lett., vol. 32, no. 5, pp. 608-610, May 2011.
15. K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov, and D. R. Leadley, "Ohmic contacts to n-type germanium with low specific contact resistivity," Appl. Phys. Lett., vol. 100, no. 2, p. 022113, Jan. 2012.