Full band calculations of the intrinsic lower limit of contact resistivity

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Maassen, J ^a   Jeong, C ^a   Baraskar, A ^b   Rodwell, M ^c   Lundstrom, M ^a  

^a Purdue University   (United States)

^b IBM MICROELECTRONICS   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARISON WITH EXPERIMENTS; CONTACT RESISTIVITIES; FULL BAND; INTERFACIAL PROPERTY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LOWER LIMITS; NUMERICAL RESULTS; QUANTUM TRANSPORT;

PHYSICAL PROPERTIES; PHYSICS;

QUANTUM ELECTRONICS;

EID: 84875729627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798238     Document Type: Article

References (21)

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21. See supplementary material at http://dx.doi.org/10.1063/1.4798238 E-APPLAB-102-003313 for an assessment of the parabolic and non-parabolic approximations, the zero temperature approximation and the effect of higher energy bands using the analytical contact resistivity.