Low-resistive metal/n+-InAsSb/n-GaSb contacts

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1274-1277

  Lauer, C ^a   Dier, O ^a   Amann, M C ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; ETCHING; METALLIZING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPUTTERING;

DOPANTS; LOW-RESISTIVE METAL; NATIVE OXIDE LAYER; OHMIC IV-CHARACTERISTICS;

ELECTRIC CONTACTS;

EID: 33747274957     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/011     Document Type: Article

References (18)

1. Tadayon B, Kyono C S, Fatemi M, Tadayon S and Mittereder J A 1995 J. Vac. Sci. Technol. B 13 1-3
2. Wang C A, Shiau D A, Huang R K, Harris C T and Connors M K 2004 J. Cryst. Growth 261 379
3. Subbanna S, Tuttle G and Kroemer H 1988 J. Electron Spectrosc. Relat. Phenom. 17 297
4. Nakamura F, Taira K, Funato K and Kawai H 1991 J. Cryst. Growth 115 474
5. Veal T D, Lowe M J and McConville C F 2002 Surf. Sci. 499 251-60
6. Mizokawa Y, Komoda O and Miyase S 1988 Thin Solid Films 156 127-43
7. Liu Z Y, Hawkins B and Kuech T F 2003 J. Vac. Sci. Technol. B 21 71-7
8. Piotrowska A, Kaminska E, Piotrowski T, Kasjaniuk S, Guziewics M, Gierlotka S, Lin X W, Liliental-Weber Z, Washburn J and Kwiatkowski S 1995 Acta Phys. Pol. A 87 419-22
9. Kilgore S, Gaw C, Henry H, Hill D and Schroder D 2005 Mater. Res. Soc. Symp. Proc. 863 B8.30
10. Brillson L J 1993 Contacts to Semiconductors (Park Ridge, NJ: Noyes)
11. Huang R K, Wang C A, Harris C T, Connors M K and Shiau D A 2004 J. Electron. Mater. 33 1406-10
12. Robinson J A and Mohney S E 2005 J. Appl. Phys. 98 033703
13. Ikossi K, Goldenberg M and Mittereder J 2002 Solid-State Electron. 46 1627-31
14. Petrovykh D Y, Yang M J and Whitman L J 2003 Surf. Sci. 523 231-40
15. Dier O, Grau M, Lauer C, Lin C and Amann M-C 2005 J. Vac. Sci. Technol. B 23 349-53
16. Vogt A, Hartnagel H L, Miehe G, Fuess H and Schmitz J 1996 J. Vac. Sci. Technol. B 14 3514-9
17. Franz G and Amann M-C 1993 J. Electrochem. Soc. 140 847-50
18. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815-75