Influence of high work function ITO:Zr films for the barrier height modification in a-Si:H/c-Si heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 122, Issue , 2014, Pages 130-135

  Hussain, Shahzada Qamar ^a,b   Kim, Sunbo ^a   Ahn, Shihyun ^a   Balaji, Nagarajan ^a   Lee, Youngseok ^a   Lee, Jae Hyeong ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b Process and Energy Systems Engineering Center PRESTIGE   (Pakistan)

Author keywords

Anti reflection layer; Hall mobility; HIT solar cell; ITO:Zr films; ITO:Zr a Si:H(p) interface; Work function

Indexed keywords

ANTI-REFLECTION LAYERS; BARRIER HEIGHTS; DEPOSITION PROCESS; HETEROJUNCTION SOLAR CELLS; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HIGH WORK FUNCTION; HIT SOLAR CELLS; INDIUM TIN OXIDE;

ELECTRIC PROPERTIES; HALL MOBILITY; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETRONS; OPEN CIRCUIT VOLTAGE; OXYGEN; SILICON; SOLAR CELLS; WORK FUNCTION;

ZIRCONIUM;

EID: 84890832714     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.11.031     Document Type: Article

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