Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resistivity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell

Solar Energy

Volumn 84, Issue 5, 2010, Pages 777-783

  Dao, Vinh Ai ^a   Heo, Jongkyu ^a   Choi, Hyungwook ^a   Kim, Yongkuk ^a   Park, Seungman ^a   Jung, Sungwook ^a   Lakshminarayan, Nariangadu ^b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b MADRAS CHRISTIAN COLLEGE   (India)

Author keywords

Band bending; Heterojunction; Simulation; Solar cells

Indexed keywords

AFORS-HET; BACK-SURFACE FIELD; BAND BENDING; BAND OFFSETS; CELL PERFORMANCE; DESIGN PARAMETERS; HETERO INTERFACES; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; HETEROSTRUCTURES; INTERFACE DEFECTS; INTRINSIC LAYER; P-TYPE SILICON; SOFTWARE SIMULATION; SOLAR CELL FABRICATION; SOLAR CELL PERFORMANCE; SURFACE FIELD; TRANSPARENT CONDUCTIVE OXIDES;

CELLS; DIRECT METHANOL FUEL CELLS (DMFC); HETEROJUNCTIONS; SOLAR CELLS; SUBSTRATES; SURFACE DEFECTS;

COMPUTER SOFTWARE;

BUFFER ZONE; ELECTRICAL RESISTIVITY; NUMERICAL MODEL; OXIDE; PARAMETERIZATION; SILICON; SOFTWARE; SOLAR POWER; SUBSTRATE;

EID: 77949913623     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2010.01.029     Document Type: Article

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