Properties of ITO:Zr films deposited by co-sputtering

Optoelectronics Letters

Volumn 4, Issue 2, 2008, Pages 137-139

  Zhang, Bo ^a   Xu, Xiao Feng ^b   Dong, Xian Ping ^a   Wu, Jian Sheng ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b DONGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FLOW RATE; NONMETALS; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING CADMIUM TELLURIDE; SUBSTRATES; SURFACE ROUGHNESS; SURFACE STRUCTURE;

CO-SPUTTERING; CRYSTALLINE STRUCTURES; ELECTRICAL PROPERTIES; GLASS SUBSTRATES; LOW-SUBSTRATE TEMPERATURE; OPTICAL BAND GAPS; OPTICAL-ELECTRICAL PROPERTIES; OXYGEN FLOW RATE; OXYGEN FLOW RATES; SUBSTRATE TEMPERATURE;

ZIRCONIUM;

EID: 49249084701     PISSN: 16731905     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11801-008-7132-5     Document Type: Article

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