The physical reason of intense electroluminescence in ITO-Si heterostructures

Thin Solid Films

Volumn 515, Issue 24 SPEC. ISS., 2007, Pages 8615-8618

  Malik, Oleksandr ^a   Martinez, Arturo I ^a   De la Hidalga W, F J ^a  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

Electroluminescence; Heterojunction; Indium oxide; Silicon; Thin film

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTROLUMINESCENCE; POINT CONTACTS; QUANTUM EFFICIENCY; THIN FILMS;

INDIUM OXIDE; RADIATION EMISSION; SILICON INTERFACES; TIN-DOPED INDIUM OXIDE (ITO);

HETEROJUNCTIONS;

EID: 34548864673     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.116     Document Type: Article

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