Crystallization kinetics of Ga-Sb-Te films for phase change memory

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5513-5517

  Cheng, Huai Yu ^a   Kao, Kin Fu ^a   Lee, Chain Ming ^b   Chin, Tsung Shune ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Crystallization kinetics; Electrical resistance; Ga Sb Te; Ga Sb Te films; PCRAM; Phase change memory

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION KINETICS; ELECTRIC RESISTANCE; PHASE CHANGE MEMORY; THERMOANALYSIS;

CRYSTALLIZATION TEMPERATURES; KINETICS EXPONENTS; OZAWA'S PLOTS;

METALLIC FILMS;

EID: 44149100530     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.100     Document Type: Article

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