Advances in ZnO-based materials for light emitting diodes

Current Opinion in Chemical Engineering

Volumn 3, Issue , 2014, Pages 51-55

  Pearton, S J ^a   Ren, F ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; MAGNETIC SEMICONDUCTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CRYSTAL QUALITIES; GAN BASED; LIGHT EMITTERS; LIGHT EMITTING DIODE (LEDS); P-TYPE DOPING; RECENT PROGRESS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 84889979060     PISSN: None     EISSN: 22113398     Source Type: Journal    
DOI: 10.1016/j.coche.2013.11.002     Document Type: Review

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