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Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 1, 2009, Pages 16-18

Nitrogen incorporation in homoepitaxial ZnO CVD epilayers

(6) Lautenschlaeger, Stefan a Eisermann, Sebastian a Meyer, Bruno K a Callison, Gordon b Wagner, Markus R b Hoffmann, Axel b

a JUSTUS LIEBIG UNIVERSITY (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; CVD PROCESS; DOPING PROPERTIES; HOMOEPITAXIAL; LOW GROWTH TEMPERATURE; LOW TEMPERATURE PHOTOLUMINESCENCE; NITROGEN INCORPORATION; POLAR SURFACES; SUBSTRATE SURFACE; SURFACE POLARITIES; ZNO; ZNO THIN FILM;

CHEMICAL VAPOR DEPOSITION; EPILAYERS; EPITAXIAL GROWTH; GROWTH TEMPERATURE; NITROGEN; OXYGEN; RAMAN SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 70449652268 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.200802215 Document Type: Article

Times cited : (29)

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