On the T2 trap in zinc oxide thin films

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 3, 2012, Pages 588-595

  Schmidt, Matthias ^a,b   Ellguth, Martin ^a   Karsthof, Robert ^a   v Wenckstern, Holger ^a   Pickenhain, Rainer ^a   Grundmann, Marius ^a   Brauer, Gerhard ^b   Ling, Francis C C ^c  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Capacitance voltage spectra; Deep levels; DLTS; ZnO

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; II-VI SEMICONDUCTORS; METAL IONS; OXIDE FILMS; OXIDE MINERALS; PHOTOIONIZATION; TEMPERATURE; THIN FILMS; ZINC OXIDE;

CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE SPECTROSCOPY; CONCENTRATION PROFILES; DEEP-LEVELS; DLTS MEASUREMENTS; REDUCED OXYGEN PARTIAL PRESSURE; STRONG DEPENDENCES; ZINC OXIDE THIN FILMS;

ACTIVATION ENERGY;

EID: 84857407284     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201147271     Document Type: Article

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