Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiN x stack with <1 cm/s effective surface recombination velocity

Applied Physics Letters

Volumn 103, Issue 18, 2013, Pages

  Herasimenka, Stanislau Y ^a   Tracy, Clarence J ^a   Sharma, Vivek ^a   Vulic, Natasa ^a   Dauksher, William J ^a   Bowden, Stuart G ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; CORONA CHARGING; FLOAT ZONES; LOW-PARASITIC; MINORITY CARRIER LIFETIMES; SATURATION CURRENT DENSITIES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION; SILICON; SILICON NITRIDE;

SILICON WAFERS;

EID: 84889683666     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4827821     Document Type: Article

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