Microscopic emission properties of nonpolar a-plane GaN grown by HVPE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Paskova, T ^a   Kroeger, R ^a   Paskov, P P ^b   Figge, S ^a   Hommel, D ^a   Monemar, B ^b   Haskell, B ^c   Fini, P ^c   Speck, J S ^c   Nakamura, S ^c  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c University of California   (United States)

Author keywords

A plane GaN; Cathodoluminescence; Cracks; Dislocations; Emission properties; Pits; Stacking faults; TEM

Indexed keywords

CATHODOLUMINESCENCE; CRACKS; FILM GROWTH; NUCLEATION; STACKING FAULTS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

A-PLANE GAN; DISLOCATIONS; EMISSION PROPERTIES; PITS;

GALLIUM NITRIDE;

EID: 33646819672     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.645672     Document Type: Conference Paper

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