Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112̄0) direction

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Teisseyre, H ^a   Skierbiszewski, C ^a   Lucznik B ^a   Kamler, G ^a   Feduniewicz, A ^a   Siekacz, M ^a   Suski, T ^a   Perlin, P ^a   Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MULTIQUANTUM WELL (MQW) STRUCTURES; NITRIDE STRUCTURES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY (PAMBE); STARK EFFECT;

GALLIUM NITRIDE;

EID: 20844433526     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899258     Document Type: Article

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