Improved performance of organic light-emitting diodes fabricated on al-doped Zno anodes incorporating a homogeneous al-doped ZnO buffer layer grown by atomic layer deposition

ACS Applied Materials and Interfaces

Volumn 5, Issue 9, 2013, Pages 3650-3655

  Choi, Yong June ^a   Gong, Su Cheol ^a   Park, Chang Sun ^a   Lee, Hong Sub ^a   Jang, Ji Geun ^b   Chang, Ho Jung ^b   Yeom, Geun Young ^c   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

^b Dankook University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Al doped ZnO (AZO); anode buffer layer; atomic layer deposition (ALD); organic light emitting diodes (OLEDs); transparent conducting oxide (TCO); work function

Indexed keywords

AL-DOPED ZINC OXIDE; AL-DOPED ZNO; ANODE BUFFER LAYERS; CURRENT EFFICIENCY; DOPING CONCENTRATION; ELECTRICAL RESISTIVITY; ORGANIC LIGHT EMITTING DIODES(OLEDS); TRANSPARENT CONDUCTING OXIDE;

ATOMIC LAYER DEPOSITION; BUFFER LAYERS; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT; OPTICAL WAVEGUIDES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTOR DOPING; WORK FUNCTION; ZINC OXIDE;

ALUMINUM;

EID: 84877332652     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400140c     Document Type: Article

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