Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

Journal of Crystal Growth

Volumn 387, Issue , 2014, Pages 96-100

  Zhang, F B ^a   Saito, K ^a   Tanaka, T ^a   Nishio, M ^a   Guo, Q X ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A1. Optical property; A1. Temperature influence; A3. Pulsed laser deposition; B2. Semiconducting gallium oxide

Indexed keywords

CRYSTAL QUALITIES; GROWTH TECHNOLOGIES; HIGH TRANSMITTANCE; LOW TEMPERATURES; SAPPHIRE SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; TEMPERATURE INFLUENCE;

ATOMIC FORCE MICROSCOPY; FILM GROWTH; GALLIUM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SAPPHIRE; X RAY DIFFRACTION;

SUBSTRATES;

EID: 84888417879     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.11.022     Document Type: Article

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