Heteroepitaxy of corundum-structured α-Ga2O3 thin films on α-Al2O3 substrates by ultrasonic mist chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 1, 2008, Pages 7311-7313

  Shinohara, Daisuke ^a   Fujita, Shizuo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Corundum structure; Oxide electronics; Sapphire substrates; Transparent semiconductor; Wide band gap semiconductor

Indexed keywords

CORUNDUM; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; HEMATITE; MOLECULAR BEAM EPITAXY; OXIDE FILMS; SAPPHIRE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES; THICK FILMS; THIN FILMS; ULTRASONIC IMAGING; VAPORS; ALUMINUM; RADIATION DAMAGE;

CORUNDUM STRUCTURE; OXIDE ELECTRONICS; SAPPHIRE SUBSTRATES; TRANSPARENT SEMICONDUCTOR; WIDE-BAND-GAP SEMICONDUCTOR;

CHEMICAL VAPOR DEPOSITION;

CORUNDUM STRUCTURE; OXIDE ELECTRONICS; SAPPHIRE SUBSTRATES; TRANSPARENT SEMICONDUCTOR; WIDE-BAND-GAP SEMICONDUCTOR;

EID: 55149087701     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7311     Document Type: Article

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