Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  Lim, Bianca ^a   Liu, An ^b   MacDonald, Daniel ^b   Bothe, Karsten ^a   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; BORON-OXYGEN; CRYSTALLINE SILICONS; CZOCHRALSKI SILICON; DEACTIVATION PROCESS; DEACTIVATION RATE; DOPING CONCENTRATION; ELEVATED TEMPERATURE; LIGHT-INDUCED DEGRADATION; LINEAR DEPENDENCE;

ACTIVATION ENERGY; BORON; DOPING (ADDITIVES); OXYGEN;

BORON COMPOUNDS;

EID: 71949084534     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3272918     Document Type: Article

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