Perturbation of au-assisted planar GaAs nanowire growth by p-type dopant impurities

Optical Materials Express

Volumn 3, Issue 10, 2013, Pages 1687-1697

  Dowdy, Ryan S ^a   Zhang, Chen ^a   Mohseni, Parsian K ^a   Fortuna, Seth A ^a   Wen, Jian Guo ^a   Coleman, James J ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING MECHANISM; GAAS NANOWIRES; GAAS(1 0 0); HIGH MOBILITY; III-V COMPOUND SEMICONDUCTOR; P-TYPE DOPANT; SELF-ALIGNED; VAPOR-LIQUID-SOLID MECHANISM;

LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; VAPORS; ZINC;

GALLIUM ARSENIDE;

EID: 84888045940     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.001687     Document Type: Article

References (30)

1. R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett. 4(5), 89-90 (1964).
2. Y. Y. Wu and P. D. Yang, "Direct observation of vapor-liquid-solid nanowire growth," J. Am. Chem. Soc. 123(13), 3165-3166 (2001).
3. C. P. Svensson, T. Mårtensson, J. Trägårdh, C. Larsson, M. Rask, D. Hessman, L. Samuelson, and J. Ohlsson, "Monolithic GaAs/InGaP nanowire light emitting diodes on silicon," Nanotechnology 19(30), 305201 (2008).
4. M. Li, R. B. Bhiladvala, T. J. Morrow, J. A. Sioss, K. K. Lew, J. M. Redwing, C. D. Keating, and T. S. Mayer, "Bottom-up assembly of large-area nanowire resonator arrays," Nat. Nanotechnol. 3(2), 88-92 (2008).
5. S. A. Fortuna and X. Li, "GaAs MESFET with a high-mobility self-assembled planar nanowire channel," IEEE Electron Device Lett. 30(6), 593-595 (2009).
6. R. Dowdy, D. A. Walko, S. A. Fortuna, and X. Li, "Realization of unidirectional planar GaAs nanowires on GaAs (110) substrates," IEEE Electron Device Lett. 33(4), 522-524 (2012).
7. S. A. Fortuna, J. Wen, I. S. Chun, and X. Li, "Planar GaAs nanowires on GaAs (100) substrates: Self-aligned, nearly twin-defect free, and transfer-printable," Nano Lett. 8(12), 4421-4427 (2008).
8. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, "Growth of nanowire superlattice structures for nanoscale photonics and electronics," Nature 415(6872), 617-620 (2002).
9. A. Maaßdorf and M. Weyers, "In-situ etching of GaAs/AlxGaAs by CBr4," J. Cryst. Growth 310(23), 4754-4756 (2008).
10. D. E. Perea, E. R. Hemesath, E. J. Schwalbach, J. L. Lensch-Falk, P. W. Voorhees, and L. J. Lauhon, "Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire," Nat. Nanotechnol. 4(5), 315-319 (2009).
11. D. Stichtenoth, K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt, and C. Ronning, "p-type doping of GaAs nanowires," Appl. Phys. Lett. 92(16), 163107 (2008).
12. C. Gutsche, I. Regolin, K. Blekker, A. Lysov, W. Prost, and F. J. Tegude, "Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth," J. Appl. Phys. 105(2), 024305 (2009).
13. C. Gutsche, A. Lysov, I. Regolin, K. Blekker, W. Prost, and F.-J. Tegude, "n-type doping of vapor-liquid-solid grown GaAs nanowires," Nanoscale Res. Lett. 6, 65 (2011).
14. M. T. Borgström, E. Norberg, P. Wickert, H. A. Nilsson, J. Trägårdh, K. A. Dick, G. Statkute, P. Ramvall, K. Deppert, and L. Samuelson, "Precursor evaluation for in situ InP nanowire doping," Nanotechnology 19(44), 445602 (2008).
15. A. C. Ford, S. Chuang, J. C. Ho, Y. L. Chueh, Z. Fan, and A. Javey, "Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn," Nano Lett. 10(2), 509-513 (2010).
16. Z. Ikonic, G. P. Srivastava, and J. C. Inkson, "Optical properties of twinning superlattices in diamond-type and zinc-blende-type semiconductors," Phys. Rev. B Condens. Matter 52(19), 14078-14085 (1995).
17. Z. Ikonić, G. P. Srivastava, and J. C. Inkson, "Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors," Phys. Rev. B Condens. Matter 48(23), 17181-17193 (1993).
18. R. E. Algra, M. Hocevar, M. A. Verheijen, I. Zardo, G. G. Immink, W. J. van Enckevort, G. Abstreiter, L. P. Kouwenhoven, E. Vlieg, and E. P. Bakkers, "Crystal structure transfer in core/shell nanowires," Nano Lett. 11(4), 1690-1694 (2011).
19. M. H. M. van Weert, A. Helman, W. van den Einden, R. E. Algra, M. A. Verheijen, M. T. Borgström, G. Immink, J. J. Kelly, L. P. Kouwenhoven, and E. P. A. M. Bakkers, "Zinc incorporation via the Vapor-Liquid-Solid mechanism into InP Nanowires," J. Am. Chem. Soc. 131(13), 4578-4579 (2009).
20. R. E. Algra, M. A. Verheijen, M. T. Borgström, L. F. Feiner, G. Immink, W. J. van Enckevort, E. Vlieg, and E. P. Bakkers, "Twinning superlattices in indium phosphide nanowires," Nature 456(7220), 369-372 (2008).
21. R. E. Algra, M. A. Verheijen, L. F. Feiner, G. G. Immink, W. J. Enckevort, E. Vlieg, and E. P. Bakkers, "The role of surface energies and chemical potential during nanowire growth," Nano Lett. 11(3), 1259-1264 (2011).
22. X. Miao, C. Zhang, and X. Li, "Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel," Nano Lett. 13(6), 2548-2552 (2013).
23. R. S. Dowdy, D. A. Walko, and X. Li, "Relationship between planar GaAs nanowire growth direction and substrate orientation," Nanotechnology 24(3), 035304 (2013).
24. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1969).
25. H. Okamoto and T. Massalski, "The Au-C (gold-carbon) system," J. Phase Equilibria 5, 378-379 (1984).
26. S. Vinaji, A. Lochthofen, W. Mertin, I. Regolin, C. Gutsche, W. Prost, F. J. Tegude, and G. Bacher, "Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy," Nanotechnology 20(38), 385702 (2009).
27. P. Caroff, K. A. Dick, J. Johansson, M. E. Messing, K. Deppert, and L. Samuelson, "Controlled polytypic and twin-plane superlattices in III-V nanowires," Nat. Nanotechnol. 4(1), 50-55 (2009).
28. Q. Xiong, J. Wang, and P. C. Eklund, "Coherent twinning phenomena: towards twinning superlattices in III-V semiconducting nanowires," Nano Lett. 6(12), 2736-2742 (2006).
29. H. J. Joyce, J. Wong-Leung, Q. Gao, H. H. Tan, and C. Jagadish, "Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters," Nano Lett. 10(3), 908-915 (2010).
30. S. A. Fortuna and X. Li, "Metal-catalyzed semiconductor nanowires: a review on the control of growth directions," Semicond. Sci. Technol. 25(2), 024005 (2010).