Monolithic barrier-all-around high electron mobility transistor with planar GaAs nanowire channel

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2548-2552

  Miao, Xin ^a   Zhang, Chen ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

GaAs; high electron mobility transistors; III V; nanowire; VLSI

Indexed keywords

EFFECTIVE ELECTRONS; GAAS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); III-V; MODULATION SCHEMES; MONOLITHICALLY INTEGRATED; PEAK EXTRINSIC TRANSCONDUCTANCE; VLSI;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; LOW POWER ELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; NANOWIRES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; VLSI CIRCUITS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84879114011     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400620f     Document Type: Article

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