SCOPUS 정보 검색 플랫폼

Volumn 310, Issue 23, 2008, Pages 4754-4756

In-situ etching of GaAs/AlxGa1-xAs by CBr4

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

A1. Etching; A3. Metalorganic vapour phase epitaxy; B1. Halides; B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; BITS; BROMINE COMPOUNDS; CRYSTAL GROWTH; ETCHING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; PHOTORESISTS; SEMICONDUCTING GALLIUM; VAPOR PHASE EPITAXY;

A1. ETCHING; A3. METALORGANIC VAPOUR PHASE EPITAXY; B1. HALIDES; B2. SEMICONDUCTING ALUMINIUM COMPOUNDS; B2. SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 56249094468 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.064 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.