Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Microelectronics Reliability

Volumn 53, Issue 12, 2013, Pages 1857-1862

  Foissac, R ^a,b   Blonkowski, S ^b   Kogelschatz, M ^a   Delcroix, P ^a,b   Gros Jean, M ^b   Bassani, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION FACTORS; BIMODAL DISTRIBUTION; CONDUCTIVE ATOMIC FORCE MICROSCOPY; DIELECTRIC BREAKDOWN MODEL; DIELECTRICS BREAKDOWN; HIGH-K GATE STACKS; INTERFACIAL LAYER; WEIBULL PARAMETERS;

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; LOGIC GATES;

WEIBULL DISTRIBUTION;

EID: 84888009461     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2013.07.003     Document Type: Article

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