Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 356-359

  Polspoel, W ^a   Vandervorst, W ^b   Aguilera, L ^c   Porti, M ^c   Nafria, M ^c   Aymerich, X ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; CAPACITANCE; CAPACITORS; CHARGE TRAPPING; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; METAL REFINING; MOS CAPACITORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; STANDARDS;

AFM; BREAKDOWN SPOTS; CONDUCTIVE ATOMIC FORCE MICROSCOPIES; CURRENT MAGNITUDES; DIELECTRIC LAYERS; ELECTRICAL STRESS; GATE-LEAKAGE MEASUREMENTS; HIGH-K GATE OXIDES; LAYER DEPOSITIONS; LEAKAGE MEASUREMENTS; METAL GATES; METAL-OXIDE SEMICONDUCTOR DEVICES; TRAP-ASSISTED TUNNELING; WET ETCH PROCESS;

ATOMIC FORCE MICROSCOPY;

EID: 59949090866     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3071845     Document Type: Article

References (9)

1. P. Fiorenza, W. Polspoel, and W. Vandervorst, Appl. Phys. Lett. 88, 222104 (2006).
2. W. Polspoel and W. Vandervorst, Microelectron. Eng. 84, 495 (2006).
3. M. Porti, M. Nafria, X. Aymerich, A. Olbrich, and B. Ebersberger, J. Appl. Phys. 91, 2071 (2002).
4. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990).
5. J. Ṕtry, Ph.D. thesis KULeuven, 2005.
6. W. Frammelsberger, G. Benstetter, J. Kiely, and R. Stamp, Appl. Surf. Sci. 253, 3615 (2007).
7. M. Porti, S. Gerardin, M. Nafria, X. Aymerich, A. Cester, A. Paccagnella, P. Schiavuta, and R. Pierobon, Microelectron. Eng. 84, 1956 (2007).
8. W. Polspoel and W. Vandervorst, Mater. Res. Soc. Symp. Proc. 1074E, 1074-Ill-02 (2008).
9. R. Degraeve, B. Govoreanu, B. Kaczer, J. Van Houdt, and G. Groeseneken, Proceedings of the 43rd Annual 2005 IEEE International Reliability Physics Symposium, 2005, IEEE Cat. No. 05CH37616 (unpublished), p. 360.