SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1376-1379

  Delcroix, P ^a,b   Blonkowski, S ^a   Kogelschatz, M ^b   Rafik, M ^a   Gourhant, O ^a   Jeanjean, D ^a   Beneyton, R ^a   Roy, D ^a   Federspiel, X ^a   Martin, F ^c   Garros, X ^c   Grampeix, H ^c   Gassilloud, R ^c  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c CEA LETI   (France)

Author keywords

Area scaling; Atomic Force Microscopy (AFM); High K; Time dependent dielectric breakdown; Ultra high vacuum

Indexed keywords

ACCELERATION FACTORS; AFM TIP; AREA SCALING; ATOMIC FORCE MICROSCOPY (AFM); GATE OXIDE; HIGH-K; NANO SCALE; SHAPE FACTOR; TIME DEPENDENT DIELECTRIC BREAKDOWN;

ATOMIC FORCE MICROSCOPY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SILICON COMPOUNDS; VACUUM;

DIELECTRIC MATERIALS;

EID: 79958036155     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.058     Document Type: Conference Paper

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