Inductively coupled plasma-reactive ion etching of c- and a-plane AlGaN over the entire Al composition range: Effect of BCl3 pretreatment in Cl2/Ar plasma chemistry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 6, 2013, Pages

  Shah, Amit P ^a   Laskar, Masihhur R ^a   Azizur Rahman, A ^a   Gokhale, Maheshwar R ^a   Bhattacharya, Arnab ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; HIGH ETCH RATE; INDUCTIVELY COUPLED PLASMA (ICP); INDUCTIVELY-COUPLED; PLASMA CHEMISTRIES; PLASMA PRE-TREATMENT; PROCESSING STEPS; SURFACE OXIDE;

ALUMINUM; ALUMINUM ALLOYS; ALUMINUM NITRIDE; BINDING ENERGY; INDUCTIVELY COUPLED PLASMA; NITRIDES; REACTIVE ION ETCHING;

ALUMINUM GALLIUM NITRIDE;

EID: 84887966110     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4818871     Document Type: Article

References (16)

1. J. Lee, H. Cho, D. C. Hays, C. R. Abernathy, S. J. Pearton, R. J. Shul, G. A. Vawter, and J. Han, IEEE J. Sel. Top. Quantum Electron. 4, 557 (1998). 10.1109/2944.704117
2. S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, and R. F. Davis, Appl. Phys. Lett. 71, 3631 (1997). 10.1063/1.120463
3. R. J. Shul, J. Vac. Sci. Technol. A 16, 1621 (1998). 10.1116/1.581130
4. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, and W. C. Hung, J. Appl. Phys. 85, 1970 (1999). 10.1063/1.369188
5. H. S. Kim, G. Y. Yeom, J. W. Lee, and T. I. Kim, J. Vac. Sci. Technol. A 17, 2214 (1999). 10.1116/1.581749
6. K. Remashan, S. J. Chua, A. Ramam, S. Prakash, and W. Liu, Semicond. Sci. Technol. 15, 386 (2000). 10.1088/0268-1242/15/4/313
7. H. S. Kim, D. H. Lee, J. W. Lee, T. I. Kim, and G. Y. Yeom, Vacuum 56, 45 (2000). 10.1016/S0042-207X(99)00156-6
8. F. A. Khan, L. Zhou, V. Kumar, I. Adesida, and R. Okojie, Mater. Sci. Eng. B 95, 51 (2002). 10.1016/S0921-5107(02)00160-5
9. Z. Meng, L. Yu, X. Li, Q. Liu, H. Duan, C. Yu, and C. Chen, Proc. SPIE 7518, 75180H (2009). 10.1117/12.841195
10. D. Buttari, Appl. Phys. Lett. 83, 4779 (2003). 10.1063/1.1632035
11. R. Dalmau, R. Collazo, S. Mita, and Z. Sitar, J. Electron. Mater. 36, 414 (2007). 10.1007/s11664-006-0044-x
12. S. C. McNevin, J. Vac. Sci. Technol. B 8, 1212 (1990). 10.1116/1.584897
13. T. Benjo, M. Tsuchihashi, M. Hanazaki, M. Tuda, and K. Ono, Jpn. J. Appl. Phys., Part I 36, 4824 (1997). 10.1143/JJAP.36.4824
14. X. Xu, V. Kuryatkov, B. Borisov, M. Pandikunta, S. A. Nikishin, and M. Holtz, MRS Proc. 1108, A09-34 (2009). 10.1557/PROC-1108-A09-34
15. M. R. Laskar, T. Ganguli, A. A. Rahman, A. P. Shah, M. R. Gokhale, and A. Bhattacharya, Phys. Status Solidi-RRL 4, 163 (2010). 10.1002/pssr.201004091
16. A. P. Shah, M. R. Laskar, A. A. Rahman, M. R. Gokhale, and A. Bhattacharya, AIP Conf. Proc. 1512, 494 (2013). 10.1063/1.4791127