High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma

Materials Science and Engineering: B

Volumn 95, Issue 1, 2002, Pages 51-54

  Khan, F A ^a   Zhou, L ^a   Kumar, V ^a   Adesida, I ^a   Okojie, R ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

AlN; Etching; ICP RIE

Indexed keywords

BORON COMPOUNDS; ELECTRIC POTENTIAL; ELECTROPLATING; INDUCTIVELY COUPLED PLASMA; MICROMACHINING; REACTIVE ION ETCHING; SUBSTRATES;

GAS CHEMISTRY;

ALUMINUM NITRIDE;

EID: 0036640931     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00160-5     Document Type: Article

References (6)