MOVPE growth and characterization of a-plane AIGaN over the entire composition range

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 7, 2010, Pages 163-165

  Laskar, Masihhur R ^a   Ganguli, Tapas ^b   Rahman, A A ^a   Shah, A P ^a   Gokhale, M R ^a   Bhattacharya, Arnab ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

AlGaN; III V semiconductors; MOCVD; X ray diffraction

Indexed keywords

A-PLANE; AL INCORPORATION; ALGAN; ALGAN EPILAYERS; ALN NUCLEATION LAYERS; COMPOSITION RANGES; GROWTH CONDITIONS; HEXAGONAL UNIT CELLS; II-IV SEMICONDUCTORS; IN-PLANE; IN-PLANE STRAINS; LATTICE PARAMETER MEASUREMENT; METAL-ORGANIC VAPOR PHASE EPITAXY; MOCVD; MOSAICITY; MOVPE GROWTH; NON-POLAR; PLANE SAPPHIRE; THICK LAYERS; V/III RATIO;

ALUMINUM; ANISOTROPY; CRYSTAL GROWTH; EPILAYERS; NUCLEATION; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; X RAYS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77954782616     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004091     Document Type: Article

References (17)

1. T. Paskova, Phys. Status Solidi B 245, 1011 (2010).
2. T. S. Ko et al., J. Cryst. Growth 300, 308 (2007).
3. J. L. Hollander et al., App. Phys. Lett. 92, 101104 (2008).
4. H. Wang et al., Appl. Phys. Lett. 84, 499 (2004).
5. H. M. Huang et al., J. Cryst. Growth 312, 869 (2010).
6. T. J. Badcock et al., J. Appl. Phys. 105, 123112 (2009).
7. C. McAleese et al., J. Cryst. Growth 272, 475 (2004).
8. M. A. Khan et al., Jpn. J. Appl. Phys. 44, 7191 (2005).
9. M. A. Moram et al., J. Appl. Phys. 105, 113501 (2009).
10. H. Angerer et al., Appl. Phys. Lett. 71, 1504 (1997).
11. M. A. Moram et al., Rep. Prog. Phys. 72, 036502 (2009).
12. C. Roder et al., J. Appl. Phys. 100, 103511 (2006).
13. V. Darakchieva et al., Phys. Rev. B 75, 195217 (2007).
14. http://www.tifr.res.in/~arnab/latticeprocedure.pdf
15. B. D. Cullity, Elements of X-ray Diffraction (Addison-Wes-ley, Reading, MA, 1978), p. 30 and Appendix 1.
16. Y. Koide et al., J. Appl. Phys. 61, 4540 (1987).
17. A. Shikanai et al., J. Appl. Phys. 81, 417 (1997).