Inductively coupled plasma reactive ion etching of III-nitride semiconductors

AIP Conference Proceedings

Volumn 1512, Issue , 2013, Pages 494-495

  Shah, A P ^a   Laskar, M R ^a   Rahman, A A ^a   Gokhale, M R ^a   Bhattacharya, A ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

AlxGa1 xN; GaN; ICP RIE; III N

Indexed keywords

EID: 84874872979     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4791127     Document Type: Conference Paper

References (3)

1. S. A. Smith, C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis and W. V. Lampert, Appl. Phys. Letters 71, 3631-3633 (1997).
2. M.R. Laskar, T. Ganguli, A. A. Rahman, A.P. Shah, M. R. Gokhale and A. Bhattacharya, Phys. Stat. Solid.-Rapid Res. Lett. 4, 163 (2010).
3. D. Buttari, A. Chini, T. Palacios, R. Coffie, L. Shen, H. Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, and U. K. Mishra, Appl. Phys. Lett., 83, 4779-4781 (2003).