Control the composition of tantalum oxynitride films by sputtering a tantalum target in Ar/O2/N2 radiofrequency magnetron plasmas

Plasma Processes and Polymers

Volumn 10, Issue 11, 2013, Pages 990-998

  Bousquet, Angélique ^a,b   Zoubian, Fadi ^a   Cellier, Joël ^a   Sauvage, Thierry ^c   Tomasella, Eric ^a  

^a UNIVERSITÉ CLERMONT AUVERGNE   (France)

^b ICCF   (France)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

optical emission spectroscopy (OES); optical properties; physical vapor deposition (PVD); Rutherford backscattering spectrometry (RBS); tantalum oxynitride

Indexed keywords

ELEMENTAL COMPOSITIONS; FLOW RATE CONDITIONS; NITROGEN ADDITIONS; OPTICAL EMISSION SPECTROSCOPIES (OES); OXYNITRIDES; RADIOFREQUENCY MAGNETRONS; RUTHERFORD BACKSCATTERING SPECTROMETRY; SPUTTERING MODES;

DEPOSITION; EMISSION SPECTROSCOPY; LEAD OXIDE; MAGNETRONS; MIXTURES; NITRIDES; OPTICAL PROPERTIES; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

TANTALUM;

EID: 84887819684     PISSN: 16128850     EISSN: 16128869     Source Type: Journal    
DOI: 10.1002/ppap.201300036     Document Type: Article

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