Study of Ta(N,O) diffusion barrier stability: Analytical and electrical characterization of low level Cu contamination in Si

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 245-251

  Stavrev, M ^a   Fischer, D ^a   Wenzel, C ^a   Heiser, T ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Faculté de Médecine   (France)

Author keywords

Amorphous like; Cu; Diffusion barriers; Si; Ta N O; Trace detection; Transient ion drift

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; THIN FILMS; TRACE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS; TRACE DETECTION; TRANSIENT ION DRIFT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031275792     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00118-4     Document Type: Article

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