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Volumn 25, Issue 21, 2013, Pages 4165-4172

Electrochemical monitoring of TiO2 atomic layer deposition by chronoamperometry and scanning electrochemical microscopy

Author keywords

atomic layer deposition (ALD); finite element modeling; nanoporous films; scanning electrochemical microscopy (SECM)

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT CONDUCTION; ELECTROCHEMICAL BEHAVIORS; ELECTROCHEMICAL MONITORING; MICROELECTRODE ARRAY; NANO-POROUS FILMS; SCANNING ELECTROCHEMICAL MICROSCOPES; SCANNING ELECTROCHEMICAL MICROSCOPY;

EID: 84887592508     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm401635v     Document Type: Article
Times cited : (24)

References (44)
  • 4
    • 84887592096 scopus 로고
    • U.S. Patent 4058430.
    • Suntola, T.; Antson, J. U.S. Patent 4058430, 1977.
    • (1977)
    • Suntola, T.1    Antson, J.2
  • 6
    • 84887595061 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors. Atomic Layer Deposition. (accessed Dec. 17).
    • International Technology Roadmap for Semiconductors. Atomic Layer Deposition. http://www.itrs.net/ (accessed Dec. 17, 2012).
    • (2012)
  • 34
    • 84887060571 scopus 로고
    • Redox Reactions at Metal-Solution Interfaces
    • In; Compton, R. G. Elsevier: Amsterdam, Vol. Chap. 1.
    • Weaver, M. J. Redox Reactions at Metal-Solution Interfaces. In Comprehensive Chemical Kinetics; Compton, R. G., Ed.; Elsevier: Amsterdam, 1987; Vol. 27, Chap. 1.
    • (1987) Comprehensive Chemical Kinetics , vol.27
    • Weaver, M.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.