SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 23, 2013, Pages 11699-11709

Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars

(8) Nandy, Suman a Gonçalves, Gonçalo a Pinto, Joana Vaz a Busani, Tito a Figueiredo, Vitor a Pereira, Luís a Paiva Martins, Rodrigo Ferrão a Fortunato, Elvira a

a UNIVERSIDADE NOVA DE LISBOA (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT MECHANISM; GLANCING ANGLE DEPOSITION TECHNIQUE; GRAIN BOUNDARY INTERFACE; NANOSTRUCTURE MORPHOLOGIES; NONUNIFORM CURRENT DISTRIBUTIONS; PREFERRED ORIENTATIONS; SCHOTTKY BARRIER HEIGHTS; SURFACE ELECTRON ACCUMULATION;

DEPOSITION; ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; ELECTRIC FIELDS; GRAIN BOUNDARIES; MORPHOLOGY; NANOSTRUCTURES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84887443594 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr03803c Document Type: Article

Times cited : (23)

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