SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 18, Issue 12, 2006, Pages 1527-1532

Homoepitaxial growth and lasing properties of ZnS nanowire and nanoribbon arrays

(6) Jiang, Yang a,c Zhang, Wen Jun a,b Jie, Jian Sheng a Meng, Xiang Min a,b Zapien, Juan Antonio a Lee, Shuit Tong a,b

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY (China)

c HEFEI UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; EPITAXIAL GROWTH; FABRICATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SYNTHESIS (CHEMICAL); ULTRAVIOLET RADIATION; WIRE; ZINC SULFIDE;

HOMOEPITAXIAL GROWTH; NANOLASERS; NANORIBBON ARRAYS; NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 33745538016 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200501913 Document Type: Article

Times cited : (147)

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