Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering

Journal of Physics Condensed Matter

Volumn 21, Issue 11, 2009, Pages

  Nandy, S ^a   Maiti, U N ^a   Ghosh, C K ^a   Chattopadhyay, K K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; AL DOPED; AL-DOPING; ARGON ATMOSPHERES; BAND EDGES; BAND-GAP NARROWING; CARRIER DENSITIES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIONS; ELECTRICAL CONDUCTIVITIES; ENERGY BAND GAPS; EXCESS OXYGENS; EXCHANGE AND CORRELATIONS; GLASS SUBSTRATES; HOLE SYSTEMS; MOTT-HUBBARD INSULATORS; NIO THIN FILMS; ORIENTED GROWTHS; P -TYPE CONDUCTIVITIES; P TYPES; PHASE FORMATIONS; QUASI PARTICLES; RADIO FREQUENCY MAGNETRON SPUTTERING; RF- MAGNETRON SPUTTERING; ROOM TEMPERATURES; SELF-DOPING; SPECTROSCOPIC STUDIES; SUBSTRATE TEMPERATURES; X-RAY DIFFRACTION STUDIES; X-RAY PHOTOELECTRONS;

ALUMINUM; ARGON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETRON SPUTTERING; MAGNETRONS; NICKEL; OPTICAL PROPERTIES; OXYGEN; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC TEMPERATURE;

EID: 65549171624     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/11/115804     Document Type: Article

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