Synthesis of two-dimensional gallium nitride via spin coating method: Influences of nitridation temperatures

Journal of Sol-Gel Science and Technology

Volumn 68, Issue 1, 2013, Pages 95-101

  Fong, C Y ^a   Ng, S S ^a   Yam, F K ^a   Abu Hassan, H ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Gallium nitride; Semiconductors; Sol gel processes; Thin films; X ray diffraction

Indexed keywords

CRYSTALLINE QUALITY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GALLIUM NITRIDES (GAN); NITRIDATION TEMPERATURE; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY; PRECURSOR SOLUTIONS; SPIN-COATING METHOD; SYNTHESIS AND CHARACTERIZATIONS;

ATOMIC FORCE MICROSCOPY; COATINGS; NITRIDATION; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SPIN COATING; THIN FILMS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84887322348     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-013-3139-x     Document Type: Article

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