Chemical solution deposited GaN films from oxygen- and nitrogen-based precursors

Journal of Materials Research

Volumn 17, Issue 10, 2002, Pages 2540-2548

  Kisailus, David ^a   Choi, Joon Hwan ^a   Lange, F F ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CONDENSATION; CRYSTAL ORIENTATION; DEPOSITION; EVAPORATION; NITROGEN; OXYGEN; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SOLUTIONS; THERMAL EFFECTS; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION METHOD; GALLIUM DIMETHYL AMIDE; GALLIUM ISOPROPOXIDE; GALLIUM NITRIDE FILMS; GALLIUM OXYNITRIDE; POLYCRYSTALLINE FILM;

GALLIUM NITRIDE;

EID: 0036804158     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2002.0369     Document Type: Article

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