SCOPUS 정보 검색 플랫폼

Volumn 233, Issue 1-2, 2001, Pages 57-67

Chemical solution deposition derived buffer layers for MOCVD-grown GaN films

(9) Puchinger, Manfred a Wagner, Thomas a Fini, Paul c Kisailus, David c Beck, Ulrich b Bill, Joachim b Aldinger, Fritz b Arzt, Eduard a Lange, Frederick F c

a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

b UNIVERSITY OF STUTTGART (Germany)

c University of California (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Gallium compounds

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON MICROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; PYROLYSIS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SPIN COATING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CHEMICAL SOLUTION DEPOSITION (CSD);

LIQUID PHASE EPITAXY;

EID: 0035502139 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01495-6 Document Type: Article

Times cited : (15)

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