Effects of annealing temperature on amorphous GaN films formed on Si(1 1 1) by pulsed laser deposition

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Xi, H Z ^a   Man, B Y ^a   Chen, C S ^a   Liu, M ^a   Wei, J ^a   Yang, S Y ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS GAN; ANNEALED FILMS; ANNEALING TEMPERATURES; CRYSTALLINE QUALITY; DEPOSITION SYSTEMS; FOURIER TRANSFORM INFRA-RED SPECTROSCOPIES; GAN FILM; GAN THIN FILMS; KRF EXCIMER LASER; MEASURED RESULTS; PHOTOLUMINESCENCE SPECTRUM; POLYCRYSTALLINE WURTZITE; POST ANNEALING; PREFERRED ORIENTATIONS; RAMAN SPECTRA; SI (1 1 1); THERMAL-ANNEALING;

AMORPHOUS SILICON; ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DEPOSITION; EXCIMER LASERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS LASERS; KRYPTON; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; THIN FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

AMORPHOUS FILMS;

EID: 68949135452     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085024     Document Type: Article

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