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Volumn 103, Issue 17, 2013, Pages

Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides

(10) Nagashima, Kazuki a Yanagida, Takeshi a Kanai, Masaki a Celano, Umberto b Rahong, Sakon a Meng, Gang a Zhuge, Fuwei a He, Yong a Ho Park, Bae c Kawai, Tomoji a,c

a OSAKA UNIVERSITY (Japan)

b UNIVERSITY OF LEUVEN (Belgium)

c Konkuk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE SIDE; ELECTRICAL CONDUCTION; ION DRIFTS; METAL OXIDES; OXIDE LAYER; P-TYPE OXIDES; RESISTIVE SWITCHING; SPATIAL IN-HOMOGENEITY;

CATHODES; COBALT COMPOUNDS;

SWITCHING SYSTEMS;

EID: 84887119566 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4826558 Document Type: Article

Times cited : (24)

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