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Volumn 103, Issue 17, 2013, Pages

Degradation mechanisms in GaN light-emitting diodes undergoing reverse-bias operations in water vapor

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; DEVICE PERFORMANCE; ELECTRICAL CHARACTERIZATION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAN LIGHT-EMITTING DIODES; HIGH ELECTRIC FIELDS; ION BEAM DEPOSITION; OPTICAL MEASUREMENT;

EID: 84887098662     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826254     Document Type: Article
Times cited : (12)

References (15)
  • 4
    • 84876997231 scopus 로고    scopus 로고
    • 10.1063/1.4803016
    • H. Chen, Appl. Phys. Lett. 102, 162106 (2013). 10.1063/1.4803016
    • (2013) Appl. Phys. Lett. , vol.102 , pp. 162106
    • Chen, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.