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Volumn 103, Issue 17, 2013, Pages
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Degradation mechanisms in GaN light-emitting diodes undergoing reverse-bias operations in water vapor
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Author keywords
[No Author keywords available]
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Indexed keywords
DEGRADATION MECHANISM;
DEVICE PERFORMANCE;
ELECTRICAL CHARACTERIZATION;
ENERGY DISPERSIVE X RAY SPECTROSCOPY;
GAN LIGHT-EMITTING DIODES;
HIGH ELECTRIC FIELDS;
ION BEAM DEPOSITION;
OPTICAL MEASUREMENT;
DEGRADATION;
ELECTRIC FIELDS;
GALLIUM NITRIDE;
OPTICAL DATA PROCESSING;
SCANNING ELECTRON MICROSCOPY;
WATER VAPOR;
X RAY SPECTROSCOPY;
LIGHT EMITTING DIODES;
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EID: 84887098662
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.4826254 Document Type: Article |
Times cited : (12)
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References (15)
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