Investigation of anomaly in GaN HEMTs

Journal of the Electrochemical Society

Volumn 155, Issue 9, 2008, Pages

  Chen, Hsiang ^a,b   Preecha, Phillip ^a   Lai, Zhian ^a   Li, Guann Pyng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE MOBILITY; IMAGE ENHANCEMENT; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM; TEMPERATURE MEASUREMENT; TWO DIMENSIONAL;

BREAKDOWN STRESS; DEVICE SIMULATIONS; ELECTRICAL CHARACTERISTICS; ELECTROLUMINESCENCE (EL); ELECTRON TRAPPING; GAN HEMTS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; GATE-LEAKAGE CURRENTS; HOLE TRAPPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 49149129516     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2948371     Document Type: Article

References (17)

1. L. F. Eastman, V. Tilak, V. Kaper, J. Smart, R. Thompson, B. Green, J. R. Shealy, and T. Prunty, Phys. Status Solidi A PSSABA 0031-8965 10.1002/1521-396X(200212)194:2<433::AID-PSSA433>3.0.CO;2-R, 194, 433 (2002).
2. T. M. Kikkawa, K. Imanishi, K. Ohki, T. Kanamura, M. Okamoto, N. Hara, and N. Joshin, in Proceedings of IEEE CSIC, p. 1 (2007).
3. Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1687983, 84, 2184 (2004).
4. H. Chen, Z. Lai, S. C. Kung, R. M. Penner, Y. C. Chou, R. Lai, M. Wojtowicz, and G. P. Li, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.47.3336, 47, 3336 (2008).
5. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.906451, 48, 560 (2001).
6. J. M. Tirado, J. L. Sanchez-Rojas, and J. I. Izpura, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 54, 410 (2007).
7. Z. Y. Wang, J. Y. Qian, L. J. Cheng, G. P. Li, Y. C. Chou, R. Lai, and D. C. Streit, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918, 1998, 239.
8. N. Shigekawa, K. Shiojima, and T. Suemitsu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1398332, 79, 1196 (2001).
9. G. Meneghesso, F. Rampazzo, P. Kordos, G. Verzellesi, and E. Zanoni, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.885681, 53, 2932 (2006).
10. H. Chen, Z. Lai, P. Preecha, and G. P. Li, in Proceedings of IEEE IRPS, p. 621 (2008).
11. G. Meneghesso, C. Canali, P. Cova, E. De Bortoli, and E. Zanoni, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.491839, 17, 232 (1996).
12. Device Simulator Altlas Ver.5. 9. 26. C., Atlas User's Manual, Silvaco International March 2005.
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley & Sons, New York (1981).
14. http://www.ioffe.ru/SVA/NSM/Semicond/GaN/handstr.html
15. S. Tam and C. M. Hu, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/T-ED.1984.21698, 31, 1264 (1984).
16. K. Hui, C. Hu, P. George, and P. K. Ko, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.46951, 11, 113 (1990).
17. G. Meneghesso, R. Pierobon, F. Rampazzo, G. Tamiazzo, E. Zanoni, J. Bernat, P. Kordos, A. F. Basile, A. Chim, and G. Verzellesi, in Proceedings of IEEE IRPS, 415 (2005).