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Applied Physics Letters

Volumn 102, Issue 16, 2013, Pages

Hot carrier-induced emission from the InGaN/GaN light-emitting diode by characterizing reverse-bias electroluminescence

(1) Chen, Hsiang a

a NATIONAL CHI NAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND RECOMBINATION; CONSTANT CURRENT AND CONSTANT VOLTAGES; DEFORMED METALS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FOCUS ION BEAM; HIGH ELECTRIC FIELDS; REVERSE-BIAS; YELLOW LUMINESCENCE;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; HOT CARRIERS; LIGHT; LUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 84876997231 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4803016 Document Type: Article

Times cited : (12)

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