Degradation of high-brightness green LEDs submitted to reverse electrical stress

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1051-1053

  Meneghini, Matteo ^a   Zehnder, Ulrich ^b   Hahn, Berthold ^b   Meneghesso Sr , Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; Dislocations; Gallium nitride; Light emitting diode (LED); Reverse bias

Indexed keywords

BIAS LEVELS; BREAKDOWN MECHANISM; BREAKDOWN VOLTAGE; CURRENT LEVELS; DEGRADATION RATE; ELECTRICAL STRESS; GREEN LEDS; GREEN LIGHT; HIGH BRIGHTNESS; LEAKAGE PATHS; LIGHT-EMITTING DIODE (LED); LINEAR DEPENDENCE; REVERSE CURRENTS; REVERSE-BIAS; STRESS TEST; STRUCTURAL DEFECT;

CURRENT DENSITY; DEGRADATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE (FLUID); LIGHT; LIGHT EMISSION; POINT DEFECTS; SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 72049104201     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029129     Document Type: Article

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