Foundations of memristor based PUF architectures

Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2013

Volumn , Issue , 2013, Pages 52-57

  Rose, Garrett S ^a   McDonald, Nathan ^a   Yan, Lok Kwong ^a   Wysocki, Bryant ^a   Xu, Karen ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HARDWARE SECURITY; INTRINSIC PROCESS; NANO-METER REGIMES; NANOELECTRONIC TECHNOLOGIES; PHYSICAL UNCLONABLE FUNCTIONS (PUF); PROCESS VARIATION; SIDE CHANNEL ATTACK; TECHNOLOGY SCALING;

HARDWARE; MEMRISTORS; NANOELECTRONICS;

PASSIVE FILTERS;

EID: 84886782858     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NanoArch.2013.6623044     Document Type: Conference Paper

References (27)

1. "Inquiry into Counterfeit Electronic Parts in the Department of Defense Supply Chain," Report 112-167, Committee on Armed Services, 112th Congress, 2nd Session, United States Senate, U.S. Government Printing Office, Washington, D.C, 21 May 2012.
2. G. E. Suh, C. W. O'Donnell, I. Sachdev, and S. Devadas, "Design and implementation of the AEGIS single-chip secure processor using physical random functions," Proc. of IEEE/ACM Intl. Conf. on Computer Architecture, pp. 25-36, May 2005.
3. Y. Alkabani and F. Koushanfar, "Active control and digital rights management of integrated circuit IP cores," Proc. of the IEEE Intl. Conf. on Compilers, Architectures and Synthesis for Embedded Systems, pp. 227-234 (2008)
4. J. Guajardo, S. Kumar, G.-J. Schrijen, and P. Tuyls, "Physical unclonable functions and public-key crypto for FPGA IP protection," Proc. of the IEEE Intl. Conf. on Field Programmable Logic and Applications, pp. 189-195 (2007)
5. A.S. Oblea, A. Timilsina, D. Moore, and K.A. Campbell, "Silver chalcogenide based memristor devices," Neural Networks (IJCNN), The 2010 International Joint Conference on, pp.1-3, 18-23 July 2010
6. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, Vol. 6, pp. 833-840 (2007)
7. L. Goux, J. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and Ch. Muller, "Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers," J. Appl. Phys., Vol. 107, No. 2, pp. 024512 - 024512-7 (2010)
8. B.D. Briggs, S.M. Bishop, K.D. Leedy, B. Butcher, R. L. Moore, S. W. Novak, and N.C. Cady, "Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory," MRS Proceedings, Vol. 1337 (2011)
9. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, "Interfaces resistance switching at a few nanometer thick perovskite manganite layers," Appl. Phys. Lett., Vol. 88, No. 23 pp. 232112 - 232112-3 (2006)
10. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, "Switching the electrical resistance of individual dislocations in single crystalline SrTiO3," Nat. Mat., Vol. 5, pp. 312-320 (2006)
11. J. C. Scott and L. D. Bozano, "Nonvolatile memory elements based on organic materials," Adv. Mat., Vol. 19, pp. 1452-1463 (2007)
12. N. B. Zhitenev, A. Sidorenko, D. M. Tennant, and R. A. Cirelli, "Chemical modification of the electronic conducting states in polymer nanodevices," Nat. Nanotech., Vol. 2, pp. 237-242.
13. M. Di Ventra, Y. V. Pershin, L. O. Chua, "Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors," Proc. IEEE, Vol. 97, pp. 1717- 1724 (2009).
14. D. B. Strukov, G. S. Snider, D. R. Stewart and R. S. Williams "How we found the Missing Memristor," Nature, Vol. 453, pp. 80-83 (2008)
15. J. P. Strachan, D. B. Strukov, J. Borghetti, J. J. Yang, G. Medeiros-Ribeiro, and R. S. Williams, "The switching location of a bipolar memristor: chemical, thermal and structural mapping," Nanotechnology, Vol. 22, No. 25, 254015 (2011)
16. G. S. Rose, H. Manem, J. Rajendran, R. Karri, and R. Pino, "Leveraging Memristive Systems in the Constructure of Digital Logic Circuits and Architectures," Proceedings of the IEEE, Vol. 100, No. 6, June 2012.
17. Y. Joglekar and S. Wolf, "The elusive memristor: properties of basic electrical circuits," Eur. J. Phy., Vol. 30, pp. 661-675.
18. J. Rajendran, H. Manem, R. Karri and G.S. Rose, "Approach to Tolerate Process Related Variations in Memristor-Based Applications," Intl Conf. on VLSI Design, pp. 18-23 (2011)
19. N.R. McDonald, "Al/CuxO/Cu Memristive Devices: Fabrication, Characterization, and Modeling," M.S., College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, NY, 2012, 1517153
20. N.R. McDonald, S.M. Bishop, B.D. Briggs, J.E. Van Nostrand, and N.C. Cady, "Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices", Solid-State Electronics, Vol. 78, pp. 46-50 (2012).
21. Q. F. Xia, W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. J. Yang, W. Wu, X. M. Li, W. M. Tong, D. B. Strukov, G. S. Snider, G. Medeiros-Ribeiro, and R. S. Williams, "Memristor-CMOS Hybrid integrated cuircuit for Reconfigurable Logic," Nano Lett., Vol. 9, 3640 (2009)
22. H. Manem, J. Rajendran, and G. S. Rose, "Design Considerations for Multi-Level CMOS/Nano Memristive Memory," ACM Journal of Emerging Technologies in Computing Systems, Vol. 8, No. 1, Feb. 2012.
23. G. S. Rose, Y. Yao, J. M. Tour, A. C. Cabe, N. Gergel-Hackett, N. Majumdar, J. C. Bean, L. R. Harriott, and M. R. Stan, "Designing CMOS/Molecular Memories while Considering Device Parameter Variations," ACM Journal of Emerging Technologies in Computing Systems, Vol. 3, No. 1, April 2007.
24. H. Manem and G. S. Rose, "A Read-Monitored Write Circuit for 1T1M Memristor Memories," Proceedings of IEEE International Symposium on Circuits and Systems, Rio de Janeiro, Brazil, May 2011.
25. J. Rajendran, R. Karri, J.B. Wendt, M. Potkonjak, N. McDonald, G.S. Rose, and B. Wysocki, "Nanoelectronic Solutions for Hardware Security," in review, http://eprint.iacr.org/2012/575
26. B. Gassend, D. Clarke, M. van Dijk, and S. Devadas, "Silicon physical random functions," Proc. of the ACM Intl. Conf. on Computer and Communications Security, pp. 148-160 (2002)
27. Q. Liu, J. Sun, H. B. Lv, S. B. Long, K. B. Yin, N. Wan, Y. T. Li, L. T. Sun, and M. Liu, "Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM," Adv. Mater, Vol. 24, pp. 1844-1849 (2012)