Franz-Keldysh effect of germanium-on-silicon p-i-n diodes within a wide temperature range

Thin Solid Films

Volumn 525, Issue , 2012, Pages 110-114

  Schmid, M ^a   Kaschel, M ^a   Gollhofer, M ^a   Oehme, M ^a   Werner, J ^a   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Franz Keldysh effect; Germanium on silicon; Photodetector; Photodiode; Silicon photonics; Temperature dependence

Indexed keywords

ACTIVATION ENERGY; DARK CURRENTS; ELECTRIC FIELDS; GERMANIUM; MODULATION; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTODIODES; TEMPERATURE DISTRIBUTION;

ELECTRIC FIELD DEPENDENCE; ELECTRO OPTICAL PERFORMANCE; ELECTROOPTICAL PROPERTIES; FRANZ-KELDYSH EFFECT; GERMANIUM ON SILICONS; REVERSE DARK CURRENTS; TEMPERATURE DEPENDENCE; WIDE TEMPERATURE RANGES;

SILICON PHOTONICS;

EID: 84870249050     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.10.087     Document Type: Article

References (23)

1. D.A.B. Miller Nat. Photonics 4 2010 3
2. J. Wang, and S. Lee Sensors 11 2011 696
3. W. Arden, P. Cogez, M. Graef, R. Mahnkopf, H. Ishiuchi, T. Osada, J.T. Moon, J.S. Roh, C.H. Diaz, B. Lin, P. Apte, B. Doering, and P. Gargini International Technology Roadmap for Semiconductors Edition Report http://www.itrs.net/Links/2009ITRS/Home2009.htm 2009 (Edition)
4. J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L.C. Kimerling, and J. Michel Nat. Photonics 2 2008 433
5. S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper IEEE Photon. Technol. Lett. 21 2009 920
6. L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval Opt. Express 17 2009 6252
7. L.M. Giovane, H.-C. Luan, A.M. Agarwal, and L.C. Kimerling Appl. Phys. Lett. 78 2001 541
8. M. Kaschel, M. Oehme, O. Kirfel, and E. Kasper Solid State Electron. 53 2009 909
9. D.D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D.T. Danielson, S. Jongthammanurak, J. Michel, and L.C. Kimerling Appl. Phys. Lett. 84 2004 906
10. E.M. Pell J. Appl. Phys. 26 1955 658
11. C.-T. Sah, R.N. Noyce, and W. Shockley Proc. Inst. Radio Eng. (IRE) 45 1957 1228
12. W. Shockley, and W.T. Read Jr. Phys. Rev. 87 1952 835
13. M. Balbi, V. Sorianello, L. Colace, and G. Assanto Phys. E. 41 2009 1086
14. L. Colace, M. Balbi, V. Sorianello, and G. Assanto J. Lightwave Technol. 26 2008 2211
15. S.J. Koester, L. Schares, C.L. Schow, G. Dehlinger, and R.A. John H. Janz, J.H. Shin, Temperature Dependent Analysis of Ge-on-SOI Photodetectors and Receivers, Ottawa, Canada, September 13-15, 2006, Proc. 3rd Int. Conf. Group IV Photon 2006 179
16. M. Oehme, J. Werner, M. Kaschel, O. Kirfel, and E. Kasper Thin Solid Films 517 2008 137
17. M. Oehme, J. Werner, M. Jutzi, G. Wöhl, E. Kasper, and M. Berroth Thin Solid Films 508 2006 393
18. M. Oehme, M. Kaschel, J. Werner, O. Kirfel, M. Schmid, B. Bahouchi, E. Kasper, and J. Schulze J. Electrochem. Soc. 157 2010 H144
19. E. Anastassakis, and M. Cardona T. Suski, W. Paul, High Pressure in Semiconductor Physics II 1998 Academic Press New York 117
20. S.M. Sze Physics of Semiconductor Devices second ed. 1981 John Wiley & Sons New York 91
21. W. Franz Z. Naturforsch. 13a 1958 484
22. L.V. Keldysh JETP 33 1957 994
23. W.C. Dash, and R. Newman Phys. Rev. 99 1955 1151