Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics

Journal of Alloys and Compounds

Volumn 585, Issue , 2014, Pages 608-613

  Shin, Seung Wook ^a,d   Kim, In Young ^b,d   Kishor, G V ^b,d   Yoo, Yeong Yung ^b,c,d   Kim, Young Baek ^b,c,d   Heo, Jae Yeong ^b,d   Heo, Gi Seok ^c,d   Patil, P S ^b,d,e   Kim, Jin Hyeok ^b,d   Lee, Jeong Yong ^a,d,e  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

^c Materials Korea Institute of Industrial Technology   (South Korea)

^d SHIVAJI UNIVERSITY   (India)

^e Institute for Basic Science   (South Korea)

Author keywords

Flexible thin film; Mg and Ga co doped ZnO (MGZO); RF magnetron sputtering; Transparent conducting oxide (TCO)

Indexed keywords

CO-DOPED ZNO; FLEXIBLE THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; RF MAGNETRON SPUTTERING TECHNIQUE; RF-MAGNETRON SPUTTERING; TRANSPARENT CONDUCTING OXIDE; X-RAY DIFFRACTION STUDIES;

ELECTRIC PROPERTIES; ETHYLENE; GALLIUM; MAGNETRON SPUTTERING; X RAY DIFFRACTION; ZINC SULFIDE;

THIN FILMS;

EID: 84886188230     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.09.133     Document Type: Article

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