Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6414-6417

  Ahn, Byung Du ^a   Ko, Young Gun ^b   Oh, Sang Hoon ^a   Song, Jean Ho ^c   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

^b Yeungnam University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Electrical resistivity; Ga doped ZnO; Polyethylene telephthalate; SiOx buffer

Indexed keywords

AMBIENT TEMPERATURES; EFFECT OF OXYGEN; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; ENHANCED MOBILITY; GA-DOPED ZNO; GLASS SUBSTRATES; GRAIN SIZE; OPTICAL TRANSMITTANCE; OXYGEN PRESSURE; PET FILMS; PET SUBSTRATE; ROUGHENED SURFACES; SIOX BUFFER;

BUFFER LAYERS; ELECTRIC RESISTANCE; EPITAXIAL LAYERS; ETHYLENE; GALLIUM; GALLIUM ALLOYS; OPTICAL WAVEGUIDES; OXYGEN; PRESSURE EFFECTS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES; THERMOPLASTICS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 68349104400     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.057     Document Type: Article

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