Erratum: Expression of concern (Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature (2008) 281(8) (2120–2125), (S0030401807013181), (10.1016/j.optcom.2007.12.015));Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature

Optics Communications

Volumn 281, Issue 8, 2008, Pages 2120-2125

  Kim, Do Hyun ^a   Jeon, Hoonha ^a,b   Kim, Geumchae ^a   Hwangboe, Suejeong ^a   Verma, Ved Prakash ^b   Choi, Wonbong ^b   Jeon, Minhyon ^a  

^a Inje University   (South Korea)

^b The Department of Electrical and Computer Engineering   (United States)

Author keywords

Ga doped zinc oxide (GZO); Optical properties; Radio frequency magnetron sputtering method; ZnO

Indexed keywords

DOPING (ADDITIVES); GALLIUM; MAGNETRON SPUTTERING; ZINC OXIDE;

GA-DOPED ZINC OXIDE (GZO); RADIO-FREQUENCY MAGNETRON SPUTTERING METHOD;

THIN FILMS;

EID: 39649113757     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2021.127602     Document Type: Erratum

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