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Journal of Applied Physics

Volumn 114, Issue 14, 2013, Pages

High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment

(2) Ruan, Cheng He a Lin, Yow Jon a

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACIAL DIPOLES; SCHOTTKY BARRIER HEIGHTS; SI NANOWIRES (SINWS); SI SCHOTTKY DIODE; SULFIDE TREATMENT;

NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON;

SULFUR COMPOUNDS;

EID: 84886019155 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4825069 Document Type: Article

Times cited : (22)

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